Abstract
The 1/f noise investigation in nanoscale light-emitting diodes and lasers, based on GaAs and its solid solutions, is presented here. Leakage and additional (to recombination through quantum wells and/or dots) nonlinear currents were detected and it was shown that these currents are the main source of the 1/f noise in devices studied. From the analysis of 1/f noise spectrum in the voltage across terminals of device and emitted light intensity it was found that the noise in the leakage current and in the additional nonlinear current is transformed into the noise in optical output intensity in spontaneous emission regime.
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