1/f noise characterization of n+–p and n–i–p Hg1−xCdxTe detectors

Abstract

1/f noise in n+–p and n–i–p Hg1−xCdxTe photodiodes is discussed. The n+–p diodes have coherent-state 1/f noise or umklapp 1/f noise. The n–i–p diodes have much lower values for the Hooge parameter αH and their noise is probably due to generation–recombination-type (trapping) 1/f noise.