Abstract
The 1/ f noise in n-GaAs epitaxial layers grown by molecular beam epitaxy was investigated at room temperature for various doping concentrations. The measured 1/ f noise is a bulk effect. The noise parameter α between 10 -4 and 10 -3 was found to be dependent on the doping concentration.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
