Abstract
A versatile, digital-alloy molecular beam epitaxy (MBE) technique is employed to grow lattice-matched and strained AlGaInAs multiple-quantum well (MQW) 1.58-μm laser diodes on InP. A threshold current density as low as 510 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> has been demonstrated for broad area lasers with 1% strained AlGaInAs MQWs, which is the best MBE result in this material system. A single facet pulsed power as high as 0.56 W is obtained. It is also found that the efficiency and internal loss of digital alloy AlGaInAs QW devices are comparable to lasers grown by conventional MBE.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
