Abstract
Complex coupled GaInAsP/InP distributed feedback lasers were developed based on maskless focused ion beam lithography. By combining implantation enhanced wet chemical etching and implantation induced thermal quantum well intermixing a refractive index grating was defined self-aligned to a gain grating forming a complex coupled grating lateral to a ridge waveguide. The devices show single mode emission at wavelengths around 1.55 μm with linewidths <2 MHz and side mode suppression ratios of more than 40 dB for continuous wave operation at room temperature. A high single mode yield (>90%) over a large tuning range (88 nm) was achieved.
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