Abstract
Two laser heterostructures with active region based on seven InGaAs quantum wells and on InGaAs/InGaAlAs superlattice were grown on InP substrates by molecular beam epitaxy. Both active regions were designed for vertical-cavity surface-emitting lasers of 1535-1565 nm spectral range and had total thickness about 80-90 nm. Characteristics of edge-emitting laser diodes fabricated from grown laser heterostructures were studied and compared.
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