Abstract
The recently available precursor biphosphinoethane (BPE) was used, alongside with phosphine and with tertbutylphosphine (TBP), to grow advanced multiquantum-well (MQW) laser wafers with five quaternary, compressive strained wells. The lowest threshold current densities and the lowest optical losses were obtained with BPE. In particular, the lowest threshold current density, 328 A/cm2, is a record among published values for lasers with five wells. In this comparison, the wafer grown with phosphine came a close second and that grown with TBP was third.
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