Abstract
We report a memory effect in electroluminescence of Er-doped silicon light emitting diodes: applying a voltage pulse in reverse-bias direction below breakdown we observe 1.54μm emission only, if a forward pulse was issued before. This effect occurs for temperatures T⩽120K in sublimation molecular-beam epitaxy grown structures. This finding opens perspectives for the development of a fully complementary metal-oxide-semiconductor compatible electro-optical converter with a memory function, operating in the 1.5μm telecommunication band. Such an element could find numerous applications in telecommunication and silicon photonics and optoelectronics circuitry.
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