Abstract
ABSTRACTThe luminescence of erbium implanted in hydrogenated amorphous silicon (a-Si : H) is presented. For the first time an intense and relatively sharp luminescence at 1.54 mm is observed in a-Si : H, using implanted erbium. The Er+ emission intensity strongly depends on the hydrogen film content and on the measurement temperature. A direct correlation between the optical gap energy of the semiconductor and the hydrogen film content is observed.
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