Abstract
Near-infrared (NIR) organic light-emitting devices (OLEDs) are demonstrated by employing erbium fluoride (ErF3)-doped tris-(8-hydroxyquinoline) aluminum (Alq3) as the emitting layer. The device structure is ITO/N,N′-di-1-naphthyl-N,N′-diphenylbenzidine (NPB)/Alq3: ErF3/2,2′,2″-(1,3,5-phenylene)tris(1-phenyl-1H-benzimidazole) (TPBI)/Alq3/Al. Room-temperature electroluminescence around 1530 nm is observed due to the 4I13/2–4I15/2 transition of Er3+. Full width at half maximum (FWHM) of the electroluminescent (EL) spectrum is ∼50 nm. NIR EL intensity from the ErF3-based device is ∼4 times higher than that of Er(DBM)3Phen-based device at the same current. Alq3–ErF3 composite films are investigated by the measurements of X-ray diffraction (XRD), absorption, photoluminescence (PL) and PL decay time. Electron-only devices are also fabricated. The results indicate that energy transfer mechanism and charge trapping mechanism coexist in the NIR EL process.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.