Abstract
InGaAs strain reducing layers (SRLs) are applied to InAs bilayer quantum dots (QDs) grown by molecular beam epitaxy on GaAs substrates. By control of the QD size and density and the composition of the SRLs, peak ground state electroluminescence of up to 1.52 µm is demonstrated from devices incorporating five QD bilayers, without the need for a metamorphic buffer layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
