Abstract

A new low-voltage CMOS exponential current generator is proposed in this work. MOS transistors in weak-inversion region and a master---slave technique for the temperature compensation were used. The circuit was fabricated with standard CMOS 0.35 μm process using a single supply voltage of 1.5 V. Experimental results validate the theoretical analysis and verify the effectiveness of the proposed structure. A 40 dB range linearly in dB controlled output current with less than 1.5 dB linearity error was achieved. The structure features ±1 and ±3 dB deviations for ±10% supply voltage and 80°C temperature variations, respectively.

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