Abstract
1.5 /spl mu/m wavelength GaInAsP/InP lasers with high reflectivity deeply etched DBR have been realised. Benzocyclobutene (BCB) polymer was buried in DBR grooves thus reducing the diffraction loss compared to that obtained using air/semiconductor grooves. The reflectivity was estimated to be 90% from the measurement of the threshold current dependence on the cavity length and the output power ratio from the front to the rear facets.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
