Abstract
We demonstrate the first 1.5 μm GaInNAsSb laser grown on GaAs. It exhibits much improved threshold current density as compared with previously reported GaInNAs lasers at 1.52 μm. A 1.465 μm laser with far superior performance is also demonstrated. This device exhibits a pulsed threshold current density of 930 A/cm 2 per quantum well, a differential quantum efficiency of 0.30 W/A (both facets), an external quantum efficiency of 35%, and peak power above 70 mW. Additionally, the use of antimony allows for a decrease in the bandgap out to 1.6 μm, while still preserving luminescence efficiency as compared to 1.3 μm GaInNAs material.
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