1.5-μm Indium Phosphide-Based Quantum Dot Lasers and Optical Amplifiers: The Impact of Atom-Like Optical Gain Material for Optoelectronics Devices

Abstract

Using quantum dot (QD) structures as active material for optoelectronics was already in focus before the development of quantum well (QW) lasers and before semiconductor lasers occupied an important place in the market. The big step in reducing laser threshold conditions by substituting bulk gain materials with QWs should find a logical continuation by further reducing the dimensionality toward full 3D carrier confinement by QDs. This was predicted by theoretical considerations at the beginning of the 1980s [1], [2]. However, no practical technologies were available at that time. Top-down approaches, as originally addressed, to produce nanoscale species on very large surfaces and interface areas resulted in the accumulation of a large defect density within the active region and the domination of nonradiative carrier recombination mechanisms. Only during the early 1990s was a major breakthrough achieved with the introduction of the bottom-up approach of strain-driven, self-organized epitaxial QD growth. The first lasers were obtained in the gallium arsenide (GaAs)-based material system [3].