Abstract
The quaternary GaInNAs barrier layer was used to improve the performance of 1.3 µm GaInNAs single quantum well lasers grown by MBE. A record low threshold current density of 178 A/cm2 and a record low transparent current density of 63 A/cm2 were achieved by a ridge waveguide laser with emission at 1336 nm.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
