Abstract
We developed a dry etching process suitable for fabricating InGaAlAs laser mesa stripes. We used optimized Cl2/N2 ECR plasma for etching an InGaAlAs laser multilayer structure. This Cl2/N2 ECR plasma led to a uniform etching rate and an anisotropic profile using a nitrified side-protection mechanism. This smooth and anisotropic dry etching produced a well-matched interface for semi-insulated Fe-InP regrowth. It also enabled successfully fabricating an InGaAlAs buried heterostructure laser. The laser showed stable operation at 85°C and long-term reliability over 5000 hrs.
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