1.3-μm InGaAs MQW Metamorphic Laser Diode Fabricated With Lattice Relaxation Control Based on In Situ Curvature Measurement

Abstract

We demonstrate a lattice relaxation control by in situ curvature measurement for a metamorphic buffer. Using this relaxation control, we investigated a thin (240 nm) ${\bf In}_{\bf 0.15}{\bf Ga}_{\bf 0.85}$ As metamorphic buffer for fabricating an unstrained ${\bf In}_{\bf 0.10}{\bf Ga}_{\bf 0.90}$ As quasi-substrate on a GaAs substrate and succeeded in fabricating a 1.3-μm metamorphic InGaAs multiple-quantum well laser diode (LD) on the metamorphic buffer. We confirmed that the LD was directly modulated at 25 Gb/s with a high-characteristic temperature ( $T_{0} = 187$ K).