Abstract
Flared amplifiers fabricated with InGaAsP alloys have produced 1.26 W CW at a wavelength of 780 nm in a single-lobed, diffraction-limited far field pattern. Under quasi-CW conditions, 2.4 W of diffraction-limited power has been obtained. This represents the highest diffraction-limited power reported at 780 nm and the highest diffraction-limited power reported in the InGaAsP material system.
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