Abstract
A semiconductor saturable absorber mirror (SESAM) based passively Q-switched microchip Nd:YVO4 seed laser with pulse duration of 90ps at repetition rate of 100kHz is amplified by single-passing a Nd:YVO4 bounce amplifier with varying seed input power from 20µW to 10mW. The liquid pure metal greasy thermally conductive material is used to replace the traditional thin indium foil as the thermal contact material for better heat load transfer of the Nd:YVO4 bounce amplifier. Temperature distribution at the pump surface is measured by an infrared imager to compare with the numerically simulated results. A highest single-passing output power of 11.3W is obtained for 10mW averaged seed power, achieving a pulse peak power of ~1.25MW and pulse energy of ~113µJ. The beam quality is well preserved with M2 ≤1.25. The simple configuration of this bounce laser amplifier made the system flexible, robust and cost-effective, showing attractive potential for further applications.
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