1.1 Gbit/s RF-interconnect based on 10 GHz RF-modulation in 0.18 μm CMOS

Abstract

An RF-interconnect transceiver based on the RF-modulation and capacitive coupling for a high speed digital interface is presented. The prototype transceiver is implemented in 0.18 /spl mu/m CMOS technology. It demonstrates a maximum data rate of 1.1 Gbit/s with a 10 GHz RF-modulation. This RF-interconnect is believed to be instrumental for high-speed link applications in multi-memory and microprocessor interfaces.