Abstract
The temperature characteristic of 1.06 μm InGaAs/InGaAsP quantum well laser diode was studied.The output optical power,threshold current,conversion efficiency and spectra of the module were measured and analyzed when the module was operated with different current at different temperature.The results show that the module's characteristic changes with the temperature in the range of 15 ℃ to 55 ℃.The module's CW output optical power reduced from 40.7 W to 29.4 W.The threshold current increased from 9.29 A to 17.24 A.The conversion efficiency reduced from 54.22% to 37.55%.The lasing wavelength shift is 0.37 nm/℃ and the characteristic temperature is 68.6 K.The temperature of the device in the actual application process should be controlled in the range of 15 ℃ to 25 ℃ to maintain the stability of the device performance.
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