Abstract
As metal pitch requirements dip below 0.70 /spl mu/m, 248 nm deep ultraviolet (DUV) lithography becomes a necessity for random logic metallization. The migration to DUV requires the development of new ARC materials with low reflectivity and low chemical reactivity with the DUV resists, as well as the development of new ARC etch and metal etch processes. This work discusses a manufacturable 0.60 /spl mu/m pitch metallization scheme for advanced logic applications incorporating DUV lithography, an inorganic silicon oxynitride (SiON) anti-reflective coating (ARC) layer and standard etch chemistries. Results were characterized by SEM cross-sections and electrical data from parametric test structures.
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