Abstract
The analysis and design of a resistorless sub-bandgap voltage reference using a Schottky diode instead of a bipolar junction is presented. It is a self-biased circuit and works in the nano-ampere current consumption range at a supply voltage as low as 0.5 V. The design is validated through post-layout simulation results for a 130 nm CMOS technology, including process variability analysis. A voltage reference around 240 mV is achieved for VDD = 1.2V, with a temperature coefficient TC of 43 ppm/°C in the range from -40°C to 120°C and 192 ppm/°C with VDD = 0.5V in the same temperature range. The current consumption is 276 nA for VDD = 1.2V at 27°C, and the silicon area is 0.0016 mm2 for the entire reference.
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