Abstract

In the processing of front-wall CdS thin film solar cells the films are given a strong HCl etch prior to formation of the Cu2S layer. This results in substantially higher cell outputs. Preliminary data are reported of a study of how HCl attacks CdS films and how the attack is affected by changes in the etching parameters, particularly time, temperature and acid concentration. Etched CdS films and replicas of etched CdS film surfaces were examined by scanning electron microscopy (SEM) and selected SEM photographs are presented to illustrate the effects. It is shown that etching textures the front surface of the CdS films and forms deep pits into the films. Pitting is the factor which varies most widely on differently processed films and which seems to correlate with the output level achievable from cells made from such films. the underlying substrate seems to be the factor having most influence on the etch pits.

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