Abstract
This paper report DC and RF characteristics of InP single heterojunction bipolar transistors (SHBTs) exhibiting ultrahigh cut-off frequencies of f/sub T/ = 550 GHz and f/sub MAX/ = 255 GHz, with BV/sub CEO/ = 2.1 V. The devices exhibit record f/sub T/ performance of bipolar transistors at operating current densities in excess of 19 mA//spl mu/m/sup 2/, achieved through the use of a vertically scaled epitaxial structure featuring a 20 nm base and a lightly-doped 65 nm InGaAs collector. Thermal resistance calculations for a 0.25/spl times/8 /spl mu/m/sup 2/ device yield an R/sub TH/= 5.1/spl deg/C/mW, corresponding to a /spl Delta/T/sub j/ = 173/spl deg/C at 34 mW of power dissipation at peak operating conditions.
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