Abstract
This paper presents a systematic investigation on the controlled synthesis of wurtzite aluminum nitride (AlN) one-dimensional (1D) nanostructures in a chemical vapor deposition (CVD) system using Al and NH(3) as starting materials. By controlling reaction temperature and NH(3) flow, nanostructures with manifold morphologies including nanoneedles, branched nanoneedles, short nanorods, slim nanorods, and nanofences were synthesized with high yield and selectivity. The correlation between experiment parameters and product morphologies was interpreted by a surface diffusion based model. Moreover, electrical properties of a single nanoneedle were studied for the first time, in which typical semiconductor characteristics were observed. Silicon was speculated to incorporate into the AlN nanoneedle from silicon substrates during the synthesis, which served as an n-type donor and was responsible for the observed electrical behavior.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
