Abstract

Porous silicon (PS) layers are formed on multicrystalline silicon solar cells by chemically etching the emitter of these devices. Stain etched PS provides the simultaneous formation of a selective emitter and an antireflective layer. The optical behavior of the antireflective coating over the solar spectrum is determined, resulting in very low values of the reflectance. The variation of the topography, as well as the grain size of the PS and the metallic contacts before and after PS formation, is analyzed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Furthermore, the electrical properties of both the emitter and the front metallic contacts are investigated. Finally, the effect of rapid thermal processing in nitrogen and oxygen atmospheres on the antireflective properties of the PS is studied.

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