Abstract
A comparative analysis is made of laser diodes based on Stranski-Krastanow (SK) and sub-monolayer(SML) InAs/GaAs quantum dots, emitting at about 940 nm.Owing to the better uniformity of sub-monolayer quantum dots, the SML QD laser surpasses the SK QD onein power characteristics.A maximum output power of 3.9 W and a peak power conversion efficiency of 59%have been achieved for SML QD 100 µm wide lasers at 10 °C.
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