Abstract
A new solution for a low-voltage bulk-driven CMOS operational amplifier is presented in this study. The amplifier is designed using 50 nm process parameters and optimised for 0.5 V supply voltage. The circuit consumes 100 μW, performing 74 dB open-loop gain, 59 nV/Hz1/2 input referred noise at 1 MHz and 4.8 MHz gain bandwidth product (GBP) for 20 pF load capacitance.
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