Abstract
Replacing the aluminum back contact of screen-printed multicrystalline silicon solar cells by a novel low-temperature layer sequence boosts the absolute power conversion efficiency η by Δ η=0.4%. The optimized hydrogenated amorphous silicon (a-Si:H)-based back side junction provides efficient back side passivation and contacting at the same time. The improved passivation quality reduces the effective surface recombination velocity S eff to S eff<20 cm s −1. Due to the optimized back side layer sequence, the open circuit voltage V OC rises by Δ V OC=15 mV up to V OC=622 mV and the short circuit current increases by Δ J SC=0.8 mA cm −2.
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