0.35 μm CMOS T/R Switch for 2.4 GHz Short Range Wireless Applications

Abstract

This paper describes the design and implementation of a transmit/receive switch for 2.4 GHz ISM band applications. The T/R switch is implemented in a 0.35 μm bulk CMOS process and it occupies 150 μm · 170 μm of die area. A parasitic MOSFET model including bulk resistance is used to optimize the physical dimensions of the transistors with regard to insertion loss and isolation. The measured insertion loss is 1.3 dB without port matching. Simulations using measured s-parameters indicate that an insertion loss of 0.8 dB can be obtained with a conjugate match. The measured isolation is 42 dB and the maximum transmit power is 16 dBm.