0.34 <inline-formula> <tex-math notation="LaTeX">$\text{V}_{\mathrm {T}}$ </tex-math> </inline-formula> AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal

Abstract

A large GaN-Schottky barrier diode (SBD) with a recessed dual anode metal is proposed to achieve improved the forward characteristics without a degradation of the reverse performances. Using optimized dry etch condition for a large device, the electrical characteristics of the device are demonstrated when applying the recessed dual anode metal and changing the recess depths. The device size and channel width are 4 mm2 and 63 mm, respectively. The 16-nm recessed dual anode metal SBD has a turn- on voltage of 0.34 V, a breakdown voltage of 802 V, and a reverse leakage current of $1.82~\mu \text{A}$ /mm at −15 V. The packaged SBD exhibits a forward current of 6.2 A at 2 V and a reverse recovery charge of 11.54 nC.