Abstract
DC and microwave measurements on AlSb/InAs HEMTs with a gate length of 0.21 mu m are reported. The reverse gate characteristics exhibit relatively low gate leakage current and gate-drain breakdown voltages as high as 5 V. Equivalent circuit modelling yields an f/sub T/ of 110 GHz after removal of the gate bonding pad capacitance. The bias dependence of f/sub max/ is examined indicating a significant reduction in the unilateral gain due to impact ionisation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
