Abstract

Existing works on battery-less of energy harvesting systems often assume as a high efficiency of rectifier circuit for power management system. In practice, rectifier circuit often varies with output power and circuit complexity. In this paper, based on a review of existing rectifier circuits for the energy harvesters in the literature, an integrated rectifier with boost converter for output power enhancement and complexity reduction of power management system is implemented through 0.18-micron CMOS process. Based on this topology and technology, low threshold-voltage of MOSFETs is used instead of diodes in order to reduce the power losses of the integrated rectifier circuit. Besides, a single switch with the duty-cycle control is introduced to reduce the complexities of the integrated boost converter. Measurement results show that the realistic performances of the rectifier circuit could be considerably improved based on the performances showed by the existing study.

Highlights

  • Energy efficiency is having an existed issue in wireless applications

  • Simulation results by using Cadence simulation tool were presented in order to verify the effects of the W/L size of MOSFET on the voltage drop for the proposed rectifier

  • The smaller MOSFETs are not enough to reduce the turn-on resistance, which contributed to the higher voltage drop and power consumption of rectifier

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Summary

Introduction

Energy efficiency is having an existed issue in wireless applications. One such solution is energy harvesting technology, which can extract maximum power from the energy harvester. Several researchers have reported a few different energy harvesting mechanisms such as light, thermal, vibration, radio frequency (RF) and so on [1,2]. The micro-harvesting systems requires an efficient rectifiers which compact in size to produce as high output power as possible [3]. Due to the compactness of the rectifiers, CMOS technologies are the popular solution to reduce the rectifier circuit size, i.e. 0.5 μm, 0.35 μm, 0.25 μm, 0.18 μm and etc. The most common setup is based on the use of CMOS bridge rectifier as it ensures a full rectification in the simplest way

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