Исследование резонансной активации резистивного переключения в пленках ZrO-=SUB=-2-=/SUB=-(Y) методом атомно-силовой микроскопии

Abstract

Local resistive switching in the contact of an atomic force microscope (AFM) probe to ZrO2(Y) films (including those with a Ta2O5 sublayer) on conducting substrates was studied. Switching was performed by triangular voltage pulses with the imposition of a high-frequency sinusoidal signal. The dependence of the difference in the current strength through the AFM probe in the low-and high-resistance States of dielectric films on the frequency of the high-frequency sinusoidal signal was observed at frequencies corresponding to the characteristic frequency of jumps of O2 ions - for oxygen vacancies in ZrO2 (Y) and Ta2O5 at 300K. The effect is associated with resonant activation of O2 ion migration along with oxygen vacancies by an external high-frequency electric field.