Abstract
Abstract The effect of Fe and Mn impurities on the magnetic parameters of ZnO wide-gap semiconductor films produced by high-frequency sputtering with wide variations in the defect concentration is studied. The introduction of Mn and Fe magnetic impurities brings about the existence of a magnetically ordered state in the semiconductor matrix, with different positions of the axis of easy magnetization. In the case of doping with Mn, this axis lies perpendicularly to the film plane, and in the case of doping with Fe, this axis lies in the film plane.
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