Abstract
The threshold of optical breakdown of a ZnGeP2 single crystal manufactured by LOK LLC, Russia, was determined, which was W0d =1.8 J / cm2, and the threshold of optical breakdown of a crystal manufactured by Harbin Institute of Technology, China, was also measured, which was W0d =2.1 J/cm2 (at a wavelength of 2,097 microns of laser radiation and a pulse repetition frequency of 10 kHz with a pulse duration of 35 ns).The effect of post-processing of ZnGeP2 single crystals (polishing of working surfaces )is investigated, application of antireflection interference coatings) to the threshold of optical breakdown of the surface of these crystals. It is established that the presence of silicon conglomerates in the interference antireflection coating leads to a decrease in the optical breakdown threshold.
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