Abstract
We have investigated Γ-X mixing effects on the no-phonon assisted (pseudodirect) transition between the n=1 X z-electron and the n=1 Γ-heavy-hole states in [001]-(GaAs) m/(AlAs) m type-II superlattices ( m=8−13 monolayers) by using photoluminescence (PL) and PL-excitation (PLE) spectroscopies. We have estimated the relative oscillator strength of the pseudodirect transition to the direct transition between the n=1 Γ-electron and Γ-heavy-hole states from the relative PLE intensity and the extrapolated relative PL intensity at infinite temperature. It is found that the relative oscillator strength is almost constant value of ∼3×10 −4 for each sample. According to a first-order perturbation theory, we evaluate a Γ-X mixing factor as a function of the layer thickness from the relative oscillator strength, and show that the mixing factor, which gradually increases from ∼0.8 to ∼1.9 meV with decreasing the layer thickness, is mainly determined by the envelope-function overlap of the Γ and X z electrons.
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