Abstract
Titanium oxide (<TEX>$TiO_2$</TEX>) thin films were synthesized on polymer insulator and Si substrates by atomic layer deposition (ALD) method. The surface and electrical properties of <TEX>$TiO_2$</TEX> films synthesized at various ALD cycle numbers were investigated. The synthesized <TEX>$TiO_2$</TEX> films exhibited higher contact angle and smooth surface. The contact angle of <TEX>$TiO_2$</TEX> films was increased with the increase of ALD-cycle number. Also, the rms surface roughness of films was slightly rough with the increase of ALD-cycle number. The leakage current on <TEX>$TiO_2$</TEX> film surface synthesized at various conditions were uniformed, and the values were decreased with the increase of ALD-cycle number. In the results, the performance of <TEX>$TiO_2$</TEX> films for self-cleaning critically depended on a number of ALD-cycle.
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