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Abstract
AIIIBV/Ge/Si (001), AIIIBV/Ge/SOI (001), and AIIIBV/GaAs (001) heterostructures were formed and investigated. The Ge buffer layer was produced by the "hot wire" technique on a Si substrate (001) for the AIIIBV/Ge/Si structure. In the case of the AIIIBV/Ge/SOI, the Ge buffer layer was grown on the SOI (001) substrate by molecular beam epitaxy via two-stage growth. The growth of AIIIBV layers were performed by metalorganic chemical vapor deposition. It is shown that the Ge/SOI formed via two-stage growth allows the growth of AIIIBV layers that are not inferior in structural and optical quality to those formed on the Ge/Si.
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