Электронографическое изучение структуры эпитаксиального графена, сформированного путем термического разложения SiC(0001) в атмосфере Ar и в высоком вакууме

Abstract

The structure of epitaxial graphene formed by thermal destruction of silicon carbide surface in the conditions of vacuum synthesis and in an Ar environment has been studied by reflection electron diffraction. As a result of the conducted study it is found the notably more homogeneous graphene coating of buffer layer on the SiC surface under the graphene formation on the polytypes 4H- и 6H- SiC(0001) surfaces in the inert environment as against the graphene synthesis in vacuum. The dependence of quality of the covering from degree of initial single crystal perfection is shown.