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Abstract
Field effect transistor (FET) was fabricated using MBE grown Si:Ce magnetic semiconductor films. To suppress the inter-diffusion between ferroelectric and Si:Ce layer, organic ferroelectric film, P(VDF-TeFE) which can be grown below 200℃ was used. By improving the surface roughness by optimizing the spin coat process condition, P(VDF-TeFE) films with ferroelectric behavior and high insulation property were successfully fabricated on Si:Ce thin films. Eventually, ferroelectric type C-V hysteresis was observed. High frequency C-V measurement shows a decrease of capacitance suggesting a formation of depletion layer in a negative bias region. Low frequency C-V measurement reveals an increase of capacitance suggesting a formation of inversion layer.
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