전자전용 S&C 대역 GaN 반도체 고출력증폭기 설계 및 제작

Abstract

This paper describes the design and measurement results of an S to C-band gallium-nitride (GaN) solid-state power amplifier (SSPA) for an electronic warfare jammer. The S to C-Band GaN SSPA is fabricated, without wideband isolator, with multiple combined of 80 W GaN module using wide-band impedance matching topology and Super CMC (S-CMC) carrier structure, and designed small-sized broadband matching circuit using a cascaded 90° hybrid coupler for improve impedance mismatching performance between GaN DRA and GaN HPA. The S to C-band GaN SSPA for the electronic warfare, with a continuous wave (CW) RF injection condition over a frequency range of 2 to 6.5 GHz, demonstrated performance with a saturated average output power of 225 W (330 W peak output power), 21.39 % power added efficiency (PAE). Furthermore, with 1 % duty & 10 µs PW Pulse RF injection condition over an operation frequency range, it had performance with a saturated average output power of 287 W (404 W peak output power).