Abstract
Al/AlN/n-type 6H-SiC (0001) MIS structures were prepared by AlN layers on vicinal 6H-SiC(0001) substrates with reactive RF magnetron sputtering method. The AlN films were annealed at <TEX>$900^{\circ}C$</TEX>, <TEX>$N_2$</TEX> atmosphere lot 1 minutes showed the best result. With XRD analysis, AlN(0002) peak was clearly found. The typical dielectric constant value of the AlN film in the MIS capacitors was obtained as 8.4 from photo C-V. Also, the gate leakage current density of the MlS capacitor was <TEX>$10^{-10}\;A/cm^2$</TEX> order within the electric field of 1.8 MV/cm. Finally, the amount of interface trap densities, <TEX>$D_{it}$</TEX>, was evaluated as <TEX>$5.3\times10^{10}\;eV^{-1}cm^{-2}$</TEX> at (Ec-0.85) eV.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: Journal of the Korean Institute of Electrical and Electronic Material Engineers
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.