Abstract
Two dimensional (2D) materials are the ideal choice for highly efficient, lightweight, low power consumption nanoelectronics in space science applications. Therefore, investigation of radiation hardness of 2D-materials is of great interest. Herein, we report the effect of gamma irradiation on chemical vapor deposition (CVD) synthesized crystalline monolayer (1 L) molybdenum disulfide (MoS2) flakes on the sapphire substrate at various doses, viz., 1–1000 kGy. We estimated that the temperature of MoS2 increases by 1.3 °C per kGy of gamma-ray dose. It was observed that up to 130 kGy (∼195 °C), gamma exposure has no significant impact on the morphology and chemical properties of MoS2. However, X-ray photoelectron spectroscopy (XPS) shows that from 275 kGy (∼385 °C), MoS2 starts converting into MoOx. Raman spectroscopy shows that at low gamma doses, the crystallinity of MoS2 increases while at higher doses, a traceable amount of MoS2 starts converting into amorphous MoS3. Our findings show that both E1 2g and A1g Raman mode of MoS2 blue shift as gamma dose increases owing to the combined effect of sulfur vacancies creation and strain caused by thermal expansion of MoS2.
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