Abstract
We have studied the effect of low-intensity (I ∼ 1.2 × 105 cm−2 s−1) β radiation on the exfoliation of thin amorphous AlN films (with thicknesses on the order of 100 nm) from (100)-oriented silicon substrate as a result of scratching with a Berkovich pyramid at a linearly increasing load. It is established that AlN film beta-irradiated to a fluence of f = 2.16 × 1010 cm−2 exfoliates at about 10% lower load, while the lateral force acting upon the indenter decreases by about 40%. The obtained results can be used for improving the bonding technology and must be taken into account in assessment of the reliability of thin-film structures subjected to (intentional or accidental) electron irradiation.
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