Abstract
Lead zirconate titanate (PZT) thick films with thickness of were fabricated on silicon substrate by aerosol deposition method. As-deposited films on silicon were annealed at the temperatures of . The electrical properties of films deposited by PZT powders were characterized using impedance analyzer and Sawyer-Tower circuit. The PZT powder was prepared by both conventional solid reaction process and sol-gel process. The remanent polarization, coercive field, and dielectric constant of the thick film with solid reaction process were , 30 kV/cm and 1320, respectively. On the other hand, the PZT films by sol-gel process showed a poor dielectric constant of 635. The reason was probably due to the presence of pores produced from organic residue during annealing.
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