Abstract
Platinum is commonly used as a temperature sensor because of its chemical stability. However, it is often noticed that the sensitivity, defined by temperature coefficient of resistance (TCR), of a thin film deteriorates as the device dimension decreases, compared to the single crystal one. In order to conquer this problem, we intensively studied the relationship between process temperature and the resultant crystal texture such as a grain orientation distribution. Platinum films (400 nm in thickness) were prepared by electro-magneto sputtering on a sapphire single crystal substrate (0001), heated at temperatures between 300℃ and 540℃. The substrate temperature substantially plays a key role to achieve high TCR, and the best value we got was 3900×10−6/℃ at 540℃ (cf. 3920×10−6/℃ for a single crystal), maintaining a high adhesive strength and low surface roughness. This seems to be realized by the fact that the grain boundaries disappeared and the film re-crystallized epitaxially with the substrate at least in some region, say 20 µm wide, investigated by Electron Back-Scattering Diffraction (EBSD).
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