Abstract
This paper reports analytical evaluation for high level injection state of PiN diodes. In the analytical theory, we take account of current continuity at the both ends of i-layer, and its physical parameters are evaluated by comparison to device simulation results. Then, we analyze optimum parameters for maximum forward current by using the analytical theory. Besides, we employ R(resistance at forward biased PiN diode) × Q(stored carrier in i-layer) for the index of total performance. RQ has minimum value as a function of lifetime, and it is confirmed that longer lifetime and high current density operation has a great effect for RQ reduction.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: The transactions of the Institute of Electrical Engineers of Japan.C
Paper Title
Journal
Date
